Full-time Associate Professor, Nanjing University of Information Science and Technology, china
Jianguo Zhao is a dedicated associate professor at Nanjing University of Information Science and Technology (NUIST). Since receiving his Ph.D. in Physical & Electronics from Southeast University in 2019, he has focused on pioneering research in CVD growth of hBN, gas detectors, and III-nitride semiconductors. His work has significantly contributed to advancements in the field, making him a recognized figure in semiconductor research.
Profile
ORCID
🎓 Education:
Jianguo Zhao earned his Ph.D. in Physical & Electronics from Southeast University, China, in 2019. This solid academic foundation has been crucial in his innovative research endeavors at Nanjing University of Information Science and Technology.
💼 Experience:
Jianguo Zhao has been a full-time associate professor at Nanjing University of Information Science and Technology since 2019. His expertise includes supervising postgraduate students and leading cutting-edge research projects, notably in the areas of CVD growth of hBN and the development of III-nitride semiconductors.
🔬 Research Interests:
Jianguo Zhao’s research focuses on the CVD growth of hexagonal boron nitride (hBN), gas detection technologies, and the epitaxial growth of III-nitride semiconductors. His innovative work on ultraviolet and visible light emitters has been instrumental in advancing semiconductor technology.
🏆 Awards:
Jianguo Zhao has been recognized for his outstanding contributions to semiconductor research, receiving multiple awards. His work has earned him accolades for advancing the growth technologies and device structures of wide-bandgap semiconductors.
Publications
High-performance solar-blind photodetector
Rapid growth of 24 mm scale hexagonal boron nitride crystals
Effects of Buffer Layer on Structural Properties of AlGaN Films
Effects of Mg-doping temperature on structural and electrical properties of p-type GaN
Epitaxial growth and characteristics of a-plane GaN